Abstract
A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl 4(aq) with Sn (s) in the presence of CTAC (aq) (cetyltrimethylammonium chloride) and NaNO 3(aq) , which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 μm. © 2008 American Chemical Society.