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Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium
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Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium

J. Kwo, M. Hong and S. Nakahara
Applied Physics Letters, Vol.49(6), pp.319-321
1986

Abstract

High-quality rare-earth (RE) single-crystal films of yttrium (Y) and gadolinium (Gd) were successfully grown with the metal molecular beam epitaxy technique on a bcc Nb single-crystal film which serves as a buffer layer to the sapphire substrates. With reflection high-energy electron diffraction, the hcp RE (0001) was found to grow epitaxially on the (110) Nb in the Nishiyama-Wasserman orientation. The regrowth of Nb on this RE (0001) surface yielded the (110) orientation with 120°in-plane domains. These epitaxial relationships suggest the possibility of fabricating an ultrathin, coherent crystalline superlattice in the Nb (110)/ RE (0001) system.
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GROWTH_OF_RARE-EARTH_SINGLE-CRYSTALS_BY_MOLECULAR-BEAM_EPITAXY_-_THE_EPITAXIAL_RELATIONSHIP_BETWEEN_HCP_RARE-EARTH_AND_BCC_NIOBIUM.pdfDownloadView
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