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Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations
Journal article   Peer reviewed

Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations

Yi-Hsien Lee, Keng-Ku Liu, Ang-Yu Lu, Chih-Yu Wu, Cheng-Te Lin, Wenjing Zhang, Ching-Yuan Su, Chang-Lung Hsu, Tsung-Wu Lin, Kung-Hwu Wei, …
RSC Advances, Vol.2(1), pp.111-115
07/01/2012

Abstract

Layered hexagonal-boron nitride (h-BN) films were synthesized by chemical vapor deposition (CVD) on Ni foils using ammonia borane as a precursor. Confocal Raman spectroscopy and electron backscatter diffraction (EBSD) were used to probe the effect of underlying Ni crystals with various orientations on growth behaviors of h-BN layers. The growth of the h-BN layers strongly depends on the Ni crystal orientations, where the growth rate of h-BN is larger on Ni(100)-like crystal surfaces but the growth on Ni(111)-like surfaces is not detectable, suggesting that Ni (100)-like facets are likely to promote the growth of h-BN compared with Ni (111)-like surfaces. The observation is in clear contrast to the reported growth of h-BN on Ni(111) in an ultrahigh vacuum environment. The as-grown CVD h-BN films on Ni exhibit a layered structure as revealed by atomic force microscopy (AFM). Thin h-BN layers are found on the Ni domain with a low growth rate. The observation of h-BN growth on various Ni grains may provide insights for the control of thickness, size and morphology of CVD h-BN films. © 2012 The Royal Society of Chemistry.

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