Abstract
The growth-temperature dependence of electrical and photoluminescent properties from high-quality GaSb layers grown by liquid-phase epitaxy has been studied. At the growth temperature of 600°C, a hole concentration of ∼ 1 × 10 17 cm -3 is obtained and the 16 K photoluminescence spectrum is dominated by the line BE2 at 802.9 meV associated with excitons bound to acceptors, and a stronger band-acceptor emission band at 777.8 meV. With reducing the growth temperature, the hole concentration gradually decreases, as does the line BE2 in the photoluminescence spectrum. The GaSb layer conduction converts from p to n with a minimum hole concentration of 2-6 × 10 15 cm -3 when the growth temperature is below 450°C. The line D located at 808.2 meV, due to a donor-bound exciton transition, becomes dominant and the band-acceptor emission becomes very weak at lower growth temperatures. The is the first report on the growth-temperature dependence of the excitonic transitions from high-quality GaSb layers.