摘要
A HEMT-compatible power lateral field effect rectifier (L-FER) is reported and fabricated using the CF 4 plasma treatment on a GaN-on-Si wafer. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas (2DEG) channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage (V F, ON ) of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 15 μm features a V F, ON of 0.78 V at a current density of 100 A/cm 2 . This device also exhibits a reverse breakdown voltage (BV) of 460 V at a current level of 1mA/mm and a specific on-resistance (R ON, sp ) of 2.3 mΩ·cm 2 , yielding a figure-of-merit (BV 2 /R ON, sp ) of 92 MW/cm 2 . The high temperature characteristics of the L-FER are also investigated. The measurement results show a robust high temperature operation up to 250 °C. The excellent device performances, together with the lateral device structure and process compatibility with AlGaN/GaN HEMT, provide a low-cost solution for GaN power integrated circuits. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.