Abstract
High purity In 0.5 Ga 0.5 P epitaxial layers lattice-matched to GaAs substrates were grown by liquid phase epitaxy using a supercooling technique. The lowest carrier concentration of 3X 10 15 cm -3 has been achieved in the layer grown with a high temperature baked In solution and a supersaturation temperature of 6°C. A deep electron trap located at E c -0.39 eV was detected by deep level transient spectroscopy, and its concentration is below 22x 10 14 cm -3 . © 1986 The Japan Society of Applied Physics.