Abstract
Ta 2 O 5 /SiO 2 dielectric multi-layer micro-mirror array (MMA) with 3μm mirror size and 6μm array period was fabricated on c-plane sapphire substrate. The MMA was subjected to 1200°C high temperature annealing and remained intact with high reflectance in contrast to the continuous multi-layer for which the layers have undergone severe damage by 1200°C annealing. Epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was applied to the MMA that was deposited on both sapphire and sapphire with 2.56μm GaN template. The MMA was fully embedded in the ELO GaN and remained intact. The result implies that our MMA is compatible to the high temperature growth environment of GaN and the MMA could be incorporated into the structure of the micro-LED array as a one to one micro backlight reflector, or as the patterned structure on the large area LED for controlling the output light. © 2009 Optical Society of America.