Abstract
The plasma-assisted molecular beam epitaxial (PA-MBE) growth of InN films using a double-buffer technique, was investigated. The heteroepitaxial growth of InN on Si(111) was conducted using a radio-frequency nitrogen plasma source at low temperature. The reflection high energy electron diffraction (RHEED), x-ray diffraction, Raman scattering and transmission electron microscopy (TEM) analysis were used for the study of the films. It was observed that the grown films showed strong near-infrared photoluminescence intensity at room temperature.