摘要
Conductive bridge random access memory (CBRAM) is one of the promising nonvolatile memories for next-generation technology owing to its high density, low power consumption, and fast switching speed, which is also a potential candidate for implementation of neuromorphic computing. However, CBRAMs suffer from stochastically growing conducting filaments in the insulator layer. Herein, we demonstrated Al <sub>2</sub> O <sub>3</sub> sandglass nanostructures (SNGSs) embedded into HfO <sub>x</sub> -based CBRAMs via glancing angle deposition technology with the AlN thermal enhanced layer to prevent the overinjection of cations and localize the growth of conducting filaments in the HfO <sub>x</sub> switching layer. With the assistance of Al <sub>2</sub> O <sub>3</sub> SNGSs and the AlN layer, the Cu/Al <sub>2</sub> O <sub>3</sub> SNGSs/HfO <sub>x</sub> /AlN/TiN device exhibited a stable on/off ratio of >10 for more than 6000 cycles. Furthermore, with a Te top electrode, the Te/Al <sub>2</sub> O <sub>3</sub> SNGSs/HfO <sub>x</sub> /AlN/TiN device shows a multilevel cell characteristic by controlling compliance currents. In addition, it possesses excellent potentiation and depression nonlinearities of 1.28 and 0.4, respectively, which is beneficial for future applications in neuromorphic computing.