Abstract
A novel method of fabricating HfO <sub>χ</sub> -based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (>10 <sup>5</sup> cycles), robust data retention at high temperature, and fast operation speed (> 50 ns), have been demonstrated. The resistive memory based on AlCu/ HfO <sub>χ</sub> stacked layer in this letter shows promising application in the next generation of nonvolatile memory. © 2009 IEEE.