摘要
This article reports the active matrix (AM) 630-nm red flip-chip 960 $ imes$ 540 micro-light-emitting diode (MicroLED) displays with high pixels per inch (PPI) of 1600. A novel p-side-up AlGaInP thin-film structure by a wafer-transfer technique onto the sapphire substrate is proposed to fabricate the 960 $ imes$ 540 MicroLED array. In addition, the single pixel with a diameter of 10 $mu $ m on the MicroLED array exhibits excellent characteristics, including a forward voltage of 1.96 V at 17.4 $mu $ A, an extremely low leakage current of 90 fA at $-$ 10 V, and a high light output power of 94 $mu $ W at 1 mA. The highest external quantum efficiency (EQE) is 5.3% at 330 A/cm $^{ ext{2}}$ for the single pixel of MicroLED. The operability and lightening pixels of flip-chip bonding to AM driver IC analyzed by software image J are 80.21% and 415 808, respectively. Through flip-chip bonding technology, the 960 $ imes$ 540 MicroLED display can demonstrate the high-resolution graphic and video images. It is a prospective technology for the application of augmented and virtual realities (AR and VR) and optogenetic neural stimulation.