- 題名
- High-Reliability HfO 2 /ZrO 2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization
- 創作者：
- Chen-You Wei - National Tsing Hua UniversityYung-Teng Fang - National Tsing Hua UniversityYi-Ju Yao - National Tsing Hua UniversityChih-Chao Yang - Taiwan Semiconductor Manufacturing Company (Taiwan)Fu-Ju Hou - National Tsing Hua UniversityChien-Chun Chen - Department of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanYung-Hsien Wu - Department of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanYung-Chun Wu - Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
- 學術資源類型
- 期刊文章
- 出版日期
- 12/2024
- 出版資訊
- IEEE electron device letters, 卷.45(12), 頁碼.2272-2275
- 語言
- 英語
期刊文章
High-Reliability HfO 2 /ZrO 2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization
IEEE electron device letters, 卷.45(12), 頁碼.2272-2275
12/2024
指標
1 檢視次數