High Speed and Large Memory Window Ferroelectric HfZrO2 FinFET for High-Density Nonvolatile Memory

Siao-Cheng Yan; Guan-Min Lan; Chong-Jhe Sun; Ya-Han Chen; Chen-Han Wu; Hao-Kai Peng; Yu-Hsien Lin; Yung-Hsien Wu; Yung-Chun Wu

doi:10.1109/LED.2021.3097777

High Speed and Large Memory Window Ferroelectric HfZrO2 FinFET for High-Density Nonvolatile Memory

Siao-Cheng Yan, Guan-Min Lan, Chong-Jhe Sun, Ya-Han Chen, Chen-Han Wu, Hao-Kai Peng, Yu-Hsien Lin, Yung-Hsien Wu Yung-Chun Wu

IEEE Electron Device Letters

2021

: https://doi.org/10.1109/LED.2021.3097777

Degradation

Electric fields

FeFET

FeFETs

ferroelectric memory

FinFET

FinFETs

hafnium zirconium oxide

Logic gates

Silicon

Switches

Electronic

Optical and Magnetic Materials

Electrical and Electronic Engineering

We fabricated the HfZrO2 (HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with fin width of 60 nm and gate length of 100 nm for ferroelectric nonvolatile memory operations. The fabricated Fe-FinFET exhibited a large memory window (MW) at 1.5 V and high (100 ns) program/erase speeds at &null V. After 105 program/erase cycles, the MW was maintained at 1.09 V and the retention time was measured up to 104 s with no degradation. The fabricated HZO Fe-FinFET is compatible with the current FinFET process and has a high MW, a fast program/erase speed, and excellent reliability. Therefore, the fabricated Fe-FinFET is a promising candidate for high-density ferroelectric field-effect transistor memory applications.

: High Speed and Large Memory Window Ferroelectric HfZrO2 FinFET for High-Density Nonvolatile Memory
: High Speed and Large Memory Window Ferroelectric HfZrO2 FinFET for High-Density Nonvolatile Memory
: Siao-Cheng Yan (Author) - National Tsing Hua University
Guan-Min Lan (Author) - National Tsing Hua University
Chong-Jhe Sun (Author) - National Tsing Hua University
Ya-Han Chen (Author) - National Tsing Hua University
Chen-Han Wu (Author) - National Tsing Hua University
Hao-Kai Peng (Author) - Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Yu-Hsien Lin (Author) - National United University
Yung-Hsien Wu (Author) - Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
Yung-Chun Wu (Author) - National Tsing Hua University
: IEEE
: Journal article
: 2021
: IEEE Electron Device Letters
: English