- Title
- High-Speed and Low-Power Ferroelectric HfO 2/ZrO 2 Superlattice FinFET Memory Device Using AlON Interfacial Layer
- Creators - without role
- 永俊 吳
- Publication Details
- IEEE Transactions on Electron Devices
- Identifiers
- 9957775258906774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
Journal article
High-Speed and Low-Power Ferroelectric HfO 2/ZrO 2 Superlattice FinFET Memory Device Using AlON Interfacial Layer
IEEE Transactions on Electron Devices
2024
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