- Title
- High-Temperature Retention Stability of Multibit Ferroelectric HfZrO2 FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window
- Creators - without role
- 永俊 吳
- Publication Details
- IEEE Transactions on Electron Devices
- Identifiers
- 9957777359506774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
Journal article
High-Temperature Retention Stability of Multibit Ferroelectric HfZrO2 FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window
IEEE Transactions on Electron Devices
2024
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