- 題名
- High-Temperature Retention Stability of Multibit Ferroelectric HfZrO FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window
- 創作者：
- Yi Ju Yao - National Tsing Hua UniversityTsai Jung Lin - National Tsing Hua UniversityChen You Wei - National Tsing Hua UniversityBo Xu Chen - National Tsing Hua UniversityYung Teng Fang - National Tsing Hua UniversityHeng Jia Chang - National Tsing Hua UniversityYu Min Fu - National Tsing Hua University, College of Semiconductor Research, Hsinchu, TaiwanGuang Li Luo - Taiwan Semiconductor Manufacturing Company (Taiwan)Fu Ju Hou - Taiwan Semiconductor Manufacturing Company (Taiwan)Yung Chun Wu - National Tsing Hua University, Department of Engineering and System Science, Hsinchu, Taiwan
- 補助款備註
- NSTC 111-2119-M-007-010-MBK; NSTC 111-2218-E-A49-015-MBK; NSTC 112-2221-E-007-110-MY3 / National Science and Technology Council (http://data.elsevier.com/vocabulary/SciValFunders/100020595) National Science and Technology Council (http://data.elsevier.com/vocabulary/SciValFunders/100020595) 111-2218- / National Science and Technology Council Uppsala Monitoring Centre (http://data.elsevier.com/vocabulary/SciValFunders/100020521) 111-2119-M-007-010-MBK / National Science and Technology Council 112-2221-E-007-110-MY3 / National Science and Technology Council
- 學術資源類型
- 期刊文章
- 出版日期
- 2024
- 出版資訊
- IEEE transactions on electron devices, 卷.71(10), 頁碼.5975-5979
- 語言
- 英語
期刊文章
High-Temperature Retention Stability of Multibit Ferroelectric HfZrO FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window
IEEE transactions on electron devices, 卷.71(10), 頁碼.5975-5979
2024
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