Abstract
InNAlN metal-insulator-semiconductor heterojunction field-effect transistors with a gate-modulated drain current and a clear pinch-off characteristic have been demonstrated. The devices were fabricated using high-quality InN (26 nm) AlN (100 nm) epifilms grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. The devices exhibited a current density higher than ∼530 mAmm with a 5 μm gate length. The pinch-off voltage was at ∼-7 V with an associated drain leakage current less than 10 μAmm. The observed high current density may be attributed to the high sheet carrier density due to the large spontaneous polarization difference between InN and AlN. © 2007 American Institute of Physics.