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High current gain 4H-SiC NPN bipolar junction transistors
Journal article   Peer reviewed

High current gain 4H-SiC NPN bipolar junction transistors

Chih-Fang Huang and James A. Cooper Jr.
IEEE Electron Device Letters, Vol.24(6), pp.396-398
06/2003
DOI: https://doi.org/10.1109/LED.2003.813520

Abstract

BJT Current gain Silicon carbide
The authors report a common emitter current gain β of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. V CEO of these devices is 500 V, and V CBO is 700 V.

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