摘要
Multicrystalline silicon (mc-Si) photovoltaic (PV) solar cells with nanoscale surface texturing by metal-nanoparticle-assisted etching are proposed to achieve high power efficiency. The investigation of average nanorod lengths from 100nm to 1m reveals that the Si wafer decorated with 100nm thick nanorods has optical reflection of 9.5 inferior than the one with 1m thick nanorods (2). However, the short nanorods improve the doping uniformity and effectively decrease metal contact resistance. After surface passivation using the hydrogenated SiO 2 /SiN x (5nm/50nm) stack, the minority carrier lifetime substantially increases from 1.8 to 7.2μs for the 100nm-thick nanorod solar cell to achieve the high power efficiency of 16.38, compared with 1μm thick nanorod solar cell with 11.87. Copyright © 2012 W. Chuck Hsu et al.