Logo image
High-entropy BNbTaTiZr thin film with excellent thermal stability of amorphous structure and its electrical properties
Journal article   Peer reviewed

High-entropy BNbTaTiZr thin film with excellent thermal stability of amorphous structure and its electrical properties

Chun-Yang Cheng and Jien-Wei Yeh
Materials Letters, Vol.185, pp.456-459
15/12/2016

Abstract

Amorphous materials High-entropy alloys Physical vapor deposition Sputtering Thermal stability Thin films
Equi-atomic BNbTaTiZr composition was designed to achieve a thin film with exceptional thermal stability of amorphous structure. Amorphous structure of BNbTaTiZr thin film can sustain after 1 h vacuum annealing at 800 °C. To elucidate the exceptional thermal stability, thermodynamic, topological and kinetic factors are discussed through high entropy effect, atomic size difference and sluggish diffusion phenomena. The amorphous film also displays high electrical resistivity 246 ??-cm comparing with most amorphous metals. Negative temperature coefficient of resistivity is observed. The reason is related with the increased interatomic spacings with increasing temperature.

Metrics

1 Record Views

Details

Logo image