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High field effects useful for atomic manipulations
Journal article   Peer reviewed

High field effects useful for atomic manipulations

T. T. Tsong, C. S. Chang, W. B. Su, H. N. Lin, T. C. Chang and R. L. Lo
Chinese Journal of Physics Chinese Journal of Physics, Vol.32(5-II), pp.667-684
1994

Abstract

Using scanning tunneling microscope (STM), surface atoms can now be manipulated at one's will. The effects most conveniently used for atomic manipulation are produced by the high electric field established between the tip and the sample in the SThI either by the application of a voltage pulse or a voltage bias. FVe review here some of our recent studies aimed to find new methods for atomic manipulation as well as to understand the basic principles of different atomic manipulation techniques.

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