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High-gain phototransistors based on a CVD MoS2 monolayer
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High-gain phototransistors based on a CVD MoS2 monolayer

Wenjing Zhang, Jing-Kai Huang, Chang-Hsiao Chen, Yung-Huang Chang, Yuh-Jen Cheng 和 Lain-Jong Li
Advanced Materials, 卷.25(25), 頁碼.3456-3461
07/2013
DOI: https://doi.org/10.1002/adma.201301244
PMID: 23703933

摘要

ambient air molybdenum disulfides photogain phototransistors Materials Science (all) Mechanics of Materials Mechanical Engineering
A phototransistor based on a chemical vapor deposited (CVD) MoS 2 monolayer exhibits a high photoresponsivity (2200 A W -1 ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS 2 , decreasing the carrier mobility, photoresponsivity, and photogain. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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