Abstract
GaN nanowires (NWs) were synthesized through a vapor-liquid-solid (VLS) process. Based on structural analysis, the c-axis of the NW was confirmed to be perpendicular to the growth direction. Nanogenerators (NGs) fabricated by rational assembly of the GaN NWs produced an output voltage up to 1.2V and output current density of 0.16μAcm -2 . The measured performance of the GaN NGs was consistent with the calculations using finite element analysis (FEA). © 2011 IOP Publishing Ltd.