Abstract
Gate length of 1-μm enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgOTiO 2 stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO TiO 2 MOS capacitor can be as low as 6.2×10 -9 and 6.9×10 -9 A/ cm -2 at ±1-V bias, respectively. Through a self-aligned process, superior I D V D and I D V G electrical characteristics of a MOSFET were obtained. The maximum drain current is 3.69×10 -5 Aμm at a gate voltage V g of 8 V and a drain voltage V D of 10 V. The subthreshold swing is 342 mV/dec, and the I ONIrm OFF is 5.7×10 -4 . © 2006 IEEE.