Abstract
We report on the fabrication of carbon nanotube network field effect transistors, in which a submonolayer network is selectively and uniformly dispersed in the active region with individually addressable back gate. The high current on/off ratio (104) and good device-to-device uniformity were achieved by selective burnout of metallic pathways. The enhanced capacitive coupling between the gate and nanotube network reduces the subthreshold slope down to 180 mVdec. The effective local gating allows us to implement logic circuits, such as an inverter and the two most important universal NOR and NAND gates. © 2008 American Institute of Physics.