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High-performance near-infrared OLEDs maximized at 925 nm and 1022 nm through interfacial energy transfer
Journal article   Peer reviewed

High-performance near-infrared OLEDs maximized at 925 nm and 1022 nm through interfacial energy transfer

Chieh-Ming Hung, Sheng-Fu Wang, Wei-Chih Chao, Jian-Liang Li, Bo-Han Chen, Chih-Hsuan Lu, Kai-Yen Tu, Shang-Da Yang, Wen-Yi Hung, Yun Chi, …
Nature communications, Vol.15(1), pp.4664-10
31/05/2024
PMID: 38821968

Abstract

Multidisciplinary Sciences Science & Technology Science & Technology - Other Topics
Using a transfer printing technique, we imprint a layer of a designated near-infrared fluorescent dye BTP-eC9 onto a thin layer of Pt(II) complex, both of which are capable of self-assembly. Before integration, the Pt(II) complex layer gives intense deep-red phosphorescence maximized at similar to 740 nm, while the BTP-eC9 layer shows fluorescence at > 900 nm. Organic light emitting diodes fabricated under the imprinted bilayer architecture harvest most of Pt(II) complex phosphorescence, which undergoes triplet-to-singlet energy transfer to the BTP-eC9 dye, resulting in high-intensity hyperfluorescence at > 900 nm. As a result, devices achieve 925 nm emission with external quantum efficiencies of 2.24% (1.94 +/- 0.18%) and maximum radiance of 39.97 W sr(-1) m(-2). Comprehensive morphology, spectroscopy and device analyses support the mechanism of interfacial energy transfer, which also is proved successful for BTPV-eC9 dye (1022 nm), making bright and far-reaching the prospective of hyperfluorescent OLEDs in the near-infrared region.
url
https://doi.org/10.1038/s41467-024-49127-xView
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