Abstract
The high-performance polycrystalline silicon thin-film transistor (TFT) with light doped drain (LDD) structure and multiple nanowire channels (MNC) was analyzed. It was observed that the TFT with LDD structure exhibited low leakage currents since the lateral electrical field was reduced in the drain offset region. The MNC were found to generate defects in the polysilicon grin boundary, and had efficient NH 3 plasma passivation. It was also observed that the MNC TFTs exhibited low leakage current in the off state, a high ON/OFF current ratio, and a low subthreshold slope.