Abstract
Ga 1-x In x As y Sb 1-y alloys lattice-matched to GaSb were grown from Sb-rich solutions by liquid-phase epitaxy on (100)-oriented GaSb substrates at growth temperatures larger than 600°C with supercooled temperatures (ΔT) varied from 4 to 12°C. Lattice mismatch is varied from -0.97 × 10 -3 to 1.05 × 10 -3 with increasing ΔT. By optimizing the growth condition of ΔT= 8°C: the high-quality undoped GaInAsSb layer with the lowest hole concentration of 8.5 × 10 15 cm -3 and the narrowest full width at half maximum of 7.3 meV in the 10 K photoluminescence (PL) spectra can be obtained. The solid compositions of arsenic and indium decrease as the ΔT increases from 6 to 10°C which corresponds to the 10 K PL peak wavelength shifting from 1.726 to 1.716 μm.