Abstract
High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSbAlAsSb structure as the buffer layer. A 1000 Å InAsSb layer grown on top of 1 μm AlSbAlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm2 V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSbAlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 Å family of compound semiconductor alloys. © 2008 American Institute of Physics.