Abstract
The solid phase epitaxial (SPE) regrowth of 5 keV, 5 × 10 15 /cm 2 P + implanted (001)Si has been investigated by high resolution transmission electron microscopy. The low activation energy 1.45 ± 0.15 eV obtained for the initial SPE regrowth for P + implanted (001)Si is attributed to the presence of the stress induced by the excess interstitials near the original a/c interface. The activation energy of 2.5 ± 0.4 eV obtained for P + implanted samples in the later stage is close to those reported previously, although the impurity concentrations are much higher (0.6-4 at.% versus 0.1-0.5 at.%) and the regrowth occurs much closer to the surface (15 nm versus tens of nm).