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High-resolution transmission electron microscopy investigation of interfaces in metal-silicon systems
Journal article   Peer reviewed

High-resolution transmission electron microscopy investigation of interfaces in metal-silicon systems

L.J. Chen, J.M. Liang, C.S. Liu, W.Y. Hsieh, J.H. Lin, T.L. Lee, M.H. Wang and W.J. Chen
Ultramicroscopy, Vol.54(2-4), pp.156-165
1994

Abstract

High-resolution transmission electron microscopy (HRTEM) has been fruitfully applied to study metal/Si interfaces, formation and growth of amorphous interlayers, first nucleated phases, simultaneous occurence of multiphases, epitaxial silicide-Si interfaces, single-crystal silicide-silicon interfaces, twin boundaries and other defects in metal/Si systems. In this paper, examples are presented to highlight the contributions of HRTEM to the understanding of interfaces in metal/Si systems. c 1994.

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