High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems

L.J. Chen; J.B. Lai; C.S. Lee

doi:10.1016/S0968-4328(02)00008-2

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High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems

Journal article

Peer reviewed

High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems

L.J. Chen, L.J. Chen, J.B. Lai and C.S. Lee

Micron, Vol.33(6), pp.535-541

2002

DOI: https://doi.org/10.1016/S0968-4328(02)00008-2

Abstract

Interfacial reactions

Metal

Si-Ge

High-resolution transmission electron microscopy (HRTEM) in conjunction with nano-beam (NB) analysis as well as energy dispersive spectrometry analysis have been fruitfully utilized to study the interfacial reactions in the metal-Si-Ge systems. In this paper we report the results of TEM study of the phase formation and growth in Ti-Si-Ge, Cu-Si-Ge and Ni-Si-Ge systems. © 2002 Elsevier Science Ltd. All rights reserved.

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Title: High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems
Creators - without role: L.J. Chen - National Tsing Hua University
L.J. Chen - National Tsing Hua University
J.B. Lai - National Tsing Hua University
C.S. Lee - National Tsing Hua University
Identifiers: 9957769932306774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article
Publication Details: Micron, Vol.33(6), pp.535-541

High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems

Abstract

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