摘要
High-resolution x-ray analysis of Si delta-doped GaAs grown by molecular-beam epitaxy at a low substrate temperature (230°C) is presented. Superlattice satellite peaks in the rocking curve are observed for the sample annealed at 700°C for 10 min. The peak intensity increases with increasing postgrowth annealing temperature and reaches the maximum value for the 900°C annealed sample. The evolution of the x-ray rocking curves can be explained consistently by the formation of a GaAs/As superlattice during the annealing period based on the transmission electron microscope observations.