摘要
Antiferroelectric materials for dielectric energy storage with fast charging-discharging rate is an important research direction. In this study, to build a platform for the potential application in flexible transparent devices, a combination of the muscovite substrate and the antiferroelectric PbZrO 3 (PZO) is studied as a model system. The growth of PZO is first optimized on rigid substrates and then transferred to muscovite with the form of epitaxial and polycrystalline films. The energy storage performance with robust electrical and mechanical stability is systematically demonstrated. High energy densities of 46~52 J/cm 3 were obtained; Compared with the epitaxial PZO, the polycrystalline PZO shows an increase of efficiency by 28% and possesses higher heat resistance. Moreover, fabricated on a transparent indium tin oxide electrode, the PZO heterostructure exhibits excellent energy performance and an optical transmittance of up to 70–80%. Through this study, a paradigm for reliable flexible transparent fast charging-discharging energy storage element is developed.