Abstract
This letter presents results of high structural quality epi/oxide boundaries of selective epitaxy grown on (100) oxide patterned Si wafers by ultralow pressure chemical vapor deposition from SiH 4 /H 2 at 800 °C using growth-sputter cycles. The epitaxial films were characterized by cross-sectional transmission electron microscopy and Nomarski optical microscope. About 2.1 μm silicon epitaxy was grown on the exposed silicon windows with about 0.27 μm lateral epitaxial growth over the oxide near (011) epi/oxide sidewalls. Almost no lateral epitaxial overgrowth was observed near (010) sidewalls. The epi/oxide boundary and the epitaxy grown over the oxide were found to be of high structural quality and defect-free.