Abstract
Two Ge x NbTaTiZr (x=0.5, 1) compositions were designed to show excellent thermal stability in amorphous structure. Both amorphous structures in the deposited thin film can be retained after one-hour vacuum annealing at 700 °C and 750 °C, respectively. Thermodynamic, topological and kinetic factors governing this excellent thermal stability are discussed via high entropy effect, atomic size differences and sluggish diffusion phenomena.