摘要
A separation process for Cu, In, Ga, and Se (CIGS)-based thin-film solar panels is proposed in this study. Initially, the separation process, by peeling off the panels in a layer-by-layer manner, was achieved by utilizing the different thermal strains of materials inside the CIGS solar panels. Subsequently, the recovery process was performed by annealing the CIGS layers for the removal of Se, and then leaching was performed with nitric acid, followed by the individual extraction of valuable metals. The pH values, concentrations of extractant, stripping agents, organic-aqueous ratios, and reaction time were investigated in detail to optimize the separation conditions for Cu, In, and Ga. First, In was extracted using di-(2-ethylhexyl) phosphoric acid into the organic phase, while Cu and Ga remained in the aqueous phase, by controlling the extraction conditions. After the extraction of In, Ga was extracted using the same extraction agent under different conditions, and nearly pure Cu remained in the residual aqueous solution. Ammonium hydroxide was added to three solutions to form metal hydroxide precipitates. Under the optimal conditions, a recovery rate of >90% could be achieved for In, Ga, and Cu. Furthermore, all as-formed hydroxides were recycled and converted into metal oxides with a purity of >99% by calcination. These findings can provide a pathway for the effective recycling and recovery of Cu, In, and Ga from waste CIGS thin-film solar panels.