Abstract
We report on growth and characterization of both epitaxial and amorphous films Gd 2 O 3 of (ε = 14) and Y 2 O 3 (ε = 18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn 2 O 3 structure. Typical electrical leakage results are 10 -3 A/cm 2 at 1 V for single domain epitaxial Gd 2 O 3 and Y 2 O 3 films with an equivalent SiO 2 thickness, t eq , of 15 Å, and 10 -6 A/cm 2 at 1 V for smooth amorphous Y 2 O 3 films (ε = 18) with a t eq of only 10 Å. For all the Gd 2 O 3 films, the absence of SiO 2 segregation at the interface is established from infrared absorption measurements. © 2000 American Institute of Physics.