摘要
See-through double-side-emitting electroluminescent quantum-dot light-emitting-diodes (QLEDs) with highly transparent tri-layer MoO 3 /Ag:Cu/MoO 3 electrode is demonstrated in this study. The tri-layer MoO 3 /Ag: Cu/MoO 3 electrode is prepared by a thermal co-evaporation process, in which MoO 3 is utilized as both a seed layer and a capping layer. This tri-layer structure improves the transmittance as high as ≈88% and ≈86% for pure Ag and Ag:Cu at 550 nm, respectively. It is also found that minor Cu doping significantly improves the thermal stability and sheet resistance of Ag film. With the see-through tri-layer film as a device cathode, transparent double-side-emitting green QLED exhibits remarkable high brightness of 225, 500 cd m −2 , the current efficiency of 58.68 cd A −1 , the external quantum yield of 16.70%, and transmittance of 77% at 550 nm without any additional anti-reflection coating.