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Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers
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Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

Jiang Pu, Kazuma Funahashi, Chang-Hsiao Chen, Ming-Yang Li, Lain-Jong LiTaishi Takenobu
Advanced Materials, 卷.28(21), 頁碼.4111-4119
06/2016

摘要

chemical vapor deposition CMOS inverters electric double layer transistors flexible electronics transition metal dichalcogenide monolayers Materials Science (all) Mechanics of Materials Mechanical Engineering
Complementary inverters constructed from large-area monolayers of WSe 2 and MoS 2 achieve excellent logic swings and yield an extremely high gain, large total noise margin, low power consumption, and good switching speed. Moreover, the WSe 2 complementary-like inverters built on plastic substrates exhibit high mechanical stability. The results provide a path toward large-area flexible electronics.

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