Highly Sensitive DNA Detection beyond the Debye Screening Length Using CMOS Field Effect Transistors

Yi-Wei Chen; Michael S.-C. Lu

doi:10.1109/LED.2021.3090035

Highly Sensitive DNA Detection beyond the Debye Screening Length Using CMOS Field Effect Transistors

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Highly Sensitive DNA Detection beyond the Debye Screening Length Using CMOS Field Effect Transistors

Yi-Wei Chen 和 Michael S.-C. Lu

IEEE Electron Device Letters, 卷.42(8), 頁碼.1220-1223

08/2021

DOI: https://doi.org/10.1109/LED.2021.3090035

摘要

CMOS

Debye length

DNA

extended-gate field effect transistor

Electronic

Optical and Magnetic Materials

Electrical and Electronic Engineering

Field effect transistors are considered one of the key technologies to provide real-time and label-free biodetection. Direct detection in physiological solutions is, however, severely limited by the Debye charge-screening effect of the electrical double layer. Most measurements are therefore performed indirectly in diluted ionic-strength solutions. This study proposes a general technique based on modulation of the surface electric field of the CMOS (complementary metal oxide semiconductor) extended-gate field effect transistors (EGFETs) to investigate the screening effect on hybridized DNA (deoxyribonucleic acid) signals from 1 MHz to 15 MHz. The 32 EGFET sensor array exhibited a floating-gate potential change of 17.4 mV/log[DNA] from 1 fM to 100 pM with a near picomolar-level resolution and a response time below 8 minutes.

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題名: Highly Sensitive DNA Detection beyond the Debye Screening Length Using CMOS Field Effect Transistors
翻譯題名: Highly Sensitive DNA Detection beyond the Debye Screening Length Using CMOS Field Effect Transistors
創作者：: Yi-Wei Chen (作者) - National Tsing Hua University
Michael S.-C. Lu (作者) - National Tsing Hua University
學術資源類型: 期刊文章
出版日期: 08/2021
出版資訊: IEEE Electron Device Letters, 卷.42(8), 頁碼.1220-1223
語言: 英語

Highly Sensitive DNA Detection beyond the Debye Screening Length Using CMOS Field Effect Transistors

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