摘要
Molybdenum disulfide (MoS <sub>2</sub> ) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm <sup>2</sup> /(V ·s)) and a high on/off current ratio (10 <sup>5</sup> ). Furthermore, the MoS <sub>2</sub> transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS <sub>2</sub> films make them suitable for use in large-area flexible electronics. © 2012 American Chemical Society.