Abstract
Indium-tin oxide (ITO) transparent conducting films with a low resistivity of 2-3×10 -4 Ω·cm have been introduced as a window layer in (Al 0.7 Ga 0.7 ) 0.5 In 0.5 P/(Al 0.1 Ga 0.9 ) 0.5 In 0.5 P double-heterostructure orange light-emitting diodes to obtain a uniform spatial distribution of the emission light, a good device performance and high reliability. An output power of 450 μW at 20 mA corresponding to an external quantum efficiency of 1.1% for the 620 nm emission can be achieved.