Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng-Yi Wu; Sheng-Huei Dai; Shu-Fen Hu; Evans Chíng-Sung Yang; Charles Ching-Hsiang Hsu; Ya-Chin King

doi:10.1109/TED.2005.860636

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Highly scalable ballistic injection AND-type (BiAND) flash memory

Journal article

Peer reviewed

Highly scalable ballistic injection AND-type (BiAND) flash memory

Meng-Yi Wu, Sheng-Huei Dai, Shu-Fen Hu, Evans Chíng-Sung Yang, Charles Ching-Hsiang Hsu and Ya-Chin King

IEEE Transactions on Electron Devices, Vol.53(1), pp.109-111

01/2006

DOI: https://doi.org/10.1109/TED.2005.860636

Abstract

AND-type array

Ballistic

Flash memory

Split-gate flash

An AND-type split-gate Flash memory cell with a trench select gate and a buried n ⁺ source is proposed. This cell, programmed by ballistic source side injection (BSSI), can provide high programming efficiency with a cell size of 5 F ² . Furthermore, both the programming speed and the read current are enhanced by the shared select gate configuration. © 2005 IEEE.

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Title: Highly scalable ballistic injection AND-type (BiAND) flash memory
Creators - without role: Meng-Yi Wu - National Tsing Hua University
Sheng-Huei Dai - National Tsing Hua University
Shu-Fen Hu - Nano Hydrophobics (United States)
Evans Chíng-Sung Yang - eMemory Technology, Inc.
Charles Ching-Hsiang Hsu - Foxnum Technology (Taiwan)
Ya-Chin King - Department of Electrical Engineering , Semiconductor Technology Application Research (STAR) Group , National Tsing-Hua University
Publication Details: IEEE Transactions on Electron Devices, Vol.53(1), pp.109-111
Identifiers: 9957769125606774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article

Highly scalable ballistic injection AND-type (BiAND) flash memory

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