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Highly sensitive and rapid MicroRNA detection for cardiovascular diseases with electrical double layer (EDL) gated AlGaN/GaN high electron mobility transistors
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Highly sensitive and rapid MicroRNA detection for cardiovascular diseases with electrical double layer (EDL) gated AlGaN/GaN high electron mobility transistors

Yen-Wen Chen, Wen-Che Kuo, Tse-Yu Tai, Chen-Pin Hsu, Indu Sarangadharan, Anil Kumar Pulikkathodi, Shin-Li Wang, Revathi Sukesan, Hsing-You Lin, Kun-Wei Kao, …
Sensors and Actuators, B: Chemical, 卷.262, 頁碼.365-370
06/2018

摘要

AlGaN/GaN HEMT Cardiovascular diseases Electrical double layer miRNA Electronic Optical and Magnetic Materials Instrumentation Condensed Matter Physics Surfaces Coatings and Films Metals and Alloys Electrical and Electronic Engineering Materials Chemistry
This study reports the development of an efficient and sensitive method to directly sense microRNA (miRNA) in high ionic strength solutions with the use of electrical double layer (EDL) gated AlGaN/GaN high electron mobility transistor (HEMT). This FET structure uses a complementary DNA probe functionalized gate electrode which is separated from the transistor channel. In this research, we focus on the detection of miRNA samples, miR-126, miR-208a and miR-21 which are biomarkers of cardiovascular diseases (CVD). The sensor has a dynamic range that is comparable to the clinically relevant concentration range with a detection limit as low as 1 fM. Selectivity of the sensor is demonstrated by evaluating sensor response at fully complementary and slightly mismatched sequences. The miniaturized sensor can be used in point of care or homecare diagnostics for rapid miRNA detection to evaluate CVDs at an early stage.

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