摘要
We have developed a highly tunable, narrow band far-infrared (FIR) photodetector which utilizes the characteristic merits of graphene and two-dimensional electron gas (2DEG) in GaAs/Al x Ga 1 - x As heterostructure in the Quantum Hall states (QHS). The heterostructure surface is covered with chemical vapor-deposited graphene, which functions as a transparent top-gate to vary the electron density of the 2DEG. FIR response observed in the vicinity of integer QH regime can be effectively tuned in a wide range of 27-102 cm -1 with a bias voltage less than -1 V. In addition, we have found that the presence of graphene can genuinely modulate the photoresponse. Our results demonstrate a promising direction for realizing a tunable long-wavelength FIR detector using QHS in GaAs 2DEG/ graphene composite material.