Abstract
Highly uniform characteristic 12-element monolithic AlGaInAs/ InP 1.5μm strain-compensated multiquantum well ridge laser arrays with low threshold current and high characteristic temperature have been achieved. The array element exhibits a threshold current of 5.4mA and a characteristic temperature of 90K. Excellent uniformity, with standard deviations of 0.14mA, 0.007W/A, and 1.13nm for threshold current, slope efficiency and lasing wavelength, respectively, were obtained.