Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C.H. Cheng; P.C. Chen; Y.H. Wu; M.J. Wu; F.S. Yeh; Albert Chin

doi:10.1016/j.sse.2012.03.005

Back

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

Journal article

Peer reviewed

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

C.H. Cheng, P.C. Chen, Y.H. Wu, M.J. Wu, F.S. Yeh and Albert Chin

Solid-State Electronics, Vol.73, pp.60-63

07/2012

DOI: https://doi.org/10.1016/j.sse.2012.03.005

Abstract

GeO x

Hopping conduction

RRAM

TaON

Uniformity

Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10 ⁶ cycling endurance are achieved in Ni/GeO _x /Ta ₂ O _5-y N _y /TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta ₂ O _5- _y N _y for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents. © 2012 Elsevier Ltd. All rights reserved.

Metrics

1 Record Views

Details

Title: Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
Creators - without role: C.H. Cheng - Department of Electronics Engineering , Institute of Electronics Engineering , National Tsing-Hua Univ.
P.C. Chen - National Tsing Hua University
Y.H. Wu - National Tsing Hua University
M.J. Wu - Department of Mechanical Eng. , National Chiao-Tung Univ.
F.S. Yeh - National Tsing Hua University
Albert Chin - National Yang Ming Chiao Tung University
Publication Details: Solid-State Electronics, Vol.73, pp.60-63
Identifiers: 9957773916306774
Academic Unit: Tsing Hua College, National Tsing Hua University
Language: English
Resource Type: Journal article

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

Abstract

Related links

Metrics

Details

National Tsing Hua University Social media