Abstract
The fabrication and high-uniform performance of monolithically integrated 1 × 12 arrays of InGaAs/InP planar photodiodes are described. For each device of the packaged array at -5V, the dark current is ∼75pA, the capacitance is ∼2.3pF, the crosstalk capacitance between adjacent diodes is ∼0.36pF, and the quantum efficiency for each diode is 95% at 1.3μm and 89% at 1.53μm. All the deviations of the these measurements in an array are within ±1%.