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Hybrid n-type poly-Si ultra-thin nanowire shell channel with p-substrate structure by electron beam lithography adjustment for junctionless field-effect transistors
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Hybrid n-type poly-Si ultra-thin nanowire shell channel with p-substrate structure by electron beam lithography adjustment for junctionless field-effect transistors

Meng-Ju Tsai, Ya-Ying Chiang, Yu-Ru Lin, Erry Dwi Kurniawan 和 Yung-Chun Wu
ECS Journal of Solid State Science and Technology, 卷.7(11), 頁碼.Q201-Q205
2018
DOI: https://doi.org/10.1149/2.0111811jss

摘要

Electronic Optical and Magnetic Materials
This study proposes a new hybrid N channel/P substrate for junctionless field-effect transistors (JL-FET) by using electron beam lithography adjustment for the shell structure. The nanowire (NW) shell JL-FET exhibits the superior electrical properties, including high ON/OFF current ratio of 6 × 10 6 , low subthreshold swing (SS) of 95 mV/decade and drain-induced barrier lowering value (DIBL) of 50 mV/V. This NW shell structure JL-FET is simple to fabricate, and highly favorable for use in advanced System-on-panel (SoP) and three-dimensional (3-D) stacked IC applications.

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